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题名: Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE)
作者: Sun ZZ;  Liu FQ;  Ding D;  Xu B;  Wang ZG
发表日期: 1999
摘要: InAs and In0.9Al0.1As self-assembled quantum dots have been grown by Stranski-Krastanow growth mode on In0.52Al0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In0.9Al0.1As dots on InP was demonstrated for the first time. The structural and optical properties were characterized using TEM and PL, respectively. Experimental results show that, a larger critical thickness is required for In0.9Al0.1As dots formation than for InAs dots, the In0.9Al0.1As dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both InAs and In0.9Al0.1As dots, and In0.9Al0.1As dots give narrower luminescence than InAs dots. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Radiative capture;  Islands;  Photoluminescence;  Ensembles;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun ZZ; Liu FQ; Ding D; Xu B; Wang ZG .Self-assembled InAs and In0.9Al0.1As quantum dots on (001)InP substrates grown by molecular beam epitaxy (MBE) ,JOURNAL OF CRYSTAL GROWTH ,1999,204(1-2):24-28
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