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题名: Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells
作者: Zhang MH;  Li Q;  Zhang YF;  Huang Q;  Zhou JM;  Xu ZY
发表日期: 1999
摘要: Photoluminescence (PL) spectroscopy and carrier lifetime measurement has been used to characterize optical properties of defects in the low-temperature (LT) grown GaAs/AlGaAs multiple quantum well structures. Two sets of samples were grown at 400 degrees C by molecular beam epitaxy on nominal (001) and miscut [4 degrees off (001) towards (111) A] GaAs substrates, respectively. After growth, samples were subjected to 30 s rapid thermal annealing at 600-800 degrees C. It is found that after annealing, two defect-related PL features appear in the samples grown on nominal (001) GaAs substrates, but not in those grown on miscut (001) GaAs substrates. The carrier lifetimes are about 31 and 5 ps in as-grown samples grown on nominal and miscut (001) GaAs substrates, respectively. The different PL spectra and carrier lifetimes in two sets of samples are attributed to different structures of the As-Ga-like defects formed during LT growth. (C) 1999 American Institute of Physics. [S0003-6951(99)00230-2].
KOS主题词: Electrooptical devices;  atomic layer deposition;  Dynamics
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang MH; Li Q; Zhang YF; Huang Q; Zhou JM; Xu ZY .Influence of (001) vicinal GaAs substrates on the optical properties of defects in low-temperature grown GaAs/AlGaAs multiple quantum wells ,APPLIED PHYSICS LETTERS,1999,75(4):504-506
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