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题名: Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD
作者: Sun XL;  Yang H;  Wang YT;  Li GH;  Zheng LX;  Li JB;  Xu DP;  Wang ZG
发表日期: 1999
摘要: The annealing behavior of the hexagonal phase content in cubic GaN (c-GaN) thin films grown on GaAs (001) by MOCVD is reported. C-GaN thin films are grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). High temperature annealing is employed to treat the as-grown c-GaN thin films. The characterization of the c-GaN films is investigated by photoluminescence (PL) and Raman scattering spectroscopy. The change conditions of the hexagonal phase content in the metastable c-GaN are reported. There is a boundary layer existing in the c-GaN/GaAs film. When being annealed at high temperature, the intensity of the TOB and LOB phonon modes from the boundary layer weakens while that of the E-2 phonon mode from the hexagonal phase increases. The content change of hexagonal phase has closer relationship with annealing temperature than with annealing time period.
KOS主题词: Boundary layer;  Raman spectroscopy;  Epitaxy;  Phonons
刊名: SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sun XL; Yang H; Wang YT; Li GH; Zheng LX; Li JB; Xu DP; Wang ZG .Annealing behavior of hexagonal phase content in cubic GaN thin films grown on GaAs (001) by MOCVD ,SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,1999,42(7):763-768
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