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题名: Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy
作者: Jiang WH;  Xu HZ;  Xu B;  Wu J;  Ye XL;  Liu HY;  Zhou W;  Sun ZZ;  Li YF;  Liang JB;  Wang ZG
发表日期: 1999
摘要: In this paper, InGaAs quantum dots with an adjusting InGaAlAs layer underneath are grown on (n 1 1)A/B (n = 2-5) and the reference (1 0 0) substrates by molecular beam epitaxy. Small and dense InGaAs quantum dots are formed on (1 0 0) and (n 1 1)B substrates. A comparative study by atomic force microscopy shows that the alignment and uniformity for InGaAs quantum dots are greatly improved on(5 1 1)B but deteriorated on (3 1 1)B surface, demonstrating the great influence of the buried InGaAlAs layer. There is an increase in photoluminescence intensity and a decrease in the full-width at half-maximum when n varies from 2 to 5. Quantum dots formed on (3 1 1)A and (5 1 1)A surfaces are large and random in distribution, and no emission from these dots can be detected. (C) 1999 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dots;  atomic layer deposition;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jiang WH; Xu HZ; Xu B; Wu J; Ye XL; Liu HY; Zhou W; Sun ZZ; Li YF; Liang JB; Wang ZG .Fabrication of InGaAs quantum dots with an underlying InGaAlAs layer on GaAs(100) and high index substrates by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH ,1999,205(4):607-612
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