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题名: Hole capture barrier of self-organized InAs quantum dots
作者: Wang HL;  Zhu HJ;  Ning D;  Chen F;  Feng SL
发表日期: 1999
摘要: Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quantum dots. The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. The energy of ground state of 2.5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots for hole was about 0.26eV. The work is very meaningful for further understanding the intrinsic properties of quantum dots.
KOS主题词: Deep level transient spectroscopy;  ab initio calculations;  Electron;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang HL; Zhu HJ; Ning D; Chen F; Feng SL .Hole capture barrier of self-organized InAs quantum dots ,JOURNAL OF INFRARED AND MILLIMETER WAVES ,1999,18(5):397-401
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