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题名: Optical properties of nanocrystalline silicon embedded in SiO2
作者: Ma ZX;  Liao XB;  Kong GL;  Chu JH
发表日期: 1999
摘要: Nanocrystalline silicon embedded SiO2 matrix has been formed by annealing the a-SiOx films fabricated by plasma enhanced chemical vapor deposition technique. Absorption and photoluminescence spectra of, the films have been studied in conjunction with micro-Raman scattering spectra. It is found that absorption presents an exponential dependence of absorption coefficient to photon energy in the range of 1.5-3.0 eV, and a sub-band appears in the range of 1.0-1.5 eV. The exponential absorption is due to the indirect band-to-band transition of electrons in silicon nanocrystallites, while the sub-band absorption is ascribed to transitions between surfaces and/or defect states of the silicon nanocrystallites. The existence of Stokes shift between absorption and photoluminescence suggests that the phonon-assisted luminescence would he enhanced due to the quantum confinement effects.
KOS主题词: Raman effect;  Raman spectroscopy;  Infrared spectra;  Photoluminescence;  Porous silicon;  Raman effect;  Raman spectroscopy;  absorption;  Photography--Films;  Finite volume method;  Luminescence;  Photoluminescence;  mechanism
刊名: SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Ma ZX; Liao XB; Kong GL; Chu JH .Optical properties of nanocrystalline silicon embedded in SiO2 ,SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY,1999,42(9):995-1002
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