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题名: Outer space grown semi-insulating GaAs and its applications
作者: Lin LY;  Zhang MA;  Zhong XG;  Yamada M;  Chen NF
发表日期: 1999
摘要: GaAs single crystal has been grown in recoverable satellite. Hall measurements indicate that the GaAs shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown GaAs are improved greatly compared with the GaAs single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown GaAs are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating GaAs seriously affects the properties of related devices.
KOS主题词: Gallium arsenide;  Space;  Interplanetary space;  Reduced gravity environments;  Defects;  Stoichiometry
刊名: SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lin LY; Zhang MA; Zhong XG; Yamada M; Chen NF .Outer space grown semi-insulating GaAs and its applications ,SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES ,1999,42(5):456-461
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