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题名: Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing
作者: Fan TW;  Mo QW;  Lin F;  Wang ZG;  Zhang W
发表日期: 1999
摘要: The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs during thermal annealing under As overpressure has been investigated by transmission electron microscopy (TEM) and Raman scattering. Semicoherent arsenic clusters, identified by TEM examination, have been formed on the surface of the GaAs capping layer. The existence of arsenic precipitates is also confirmed by Raman spectra, showing new peaks from the annealed specimen at 256 and 199 cm(-1). These peaks have been ascribed to A(1g) and E-g Raman active phonons of crystalline arsenic. The phenomenon can be understood by a model of strain-induced selected growth under As overpressure. (C) 1999 American Institute of Physics. [S0003-6951(99)02045-8].
KOS主题词: atomic layer deposition;  Quantum dots;  Optical properties;  Luminescence;  Development
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Fan TW; Mo QW; Lin F; Wang ZG; Zhang W .Arsenic clusters on the surface of vertically aligned InAs islands on GaAs substrate by annealing ,APPLIED PHYSICS LETTERS,1999,75(19):2951-2953
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