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题名: Structural properties of SI-GaAs grown in space
作者: Chen NF;  Wang YT;  Zhong XR;  Lin LY
发表日期: 1999
摘要: The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.
KOS主题词: Reduced gravity environments;  Stoichiometry
刊名: GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen NF; Wang YT; Zhong XR; Lin LY .Structural properties of SI-GaAs grown in space ,GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES,1999,24(10):1211-1214
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