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题名: Quasi-thermodynamic analysis of MOVPE of AlGaN
作者: Lu DC;  Duan S
发表日期: 2000
摘要: A quasi-thermodynamic analysis of the MOVPE growth of AlxGa1-xN alloy using TMGa, TMA1 and ammonia has been proposed. The effect of varying growth conditions (growth temperature, reactor pressure, input V/III ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of Al has been calculated. In the case of AlxGa1-xN, preferential incorporation of Al is predicted. The calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. A good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the AlxGa1-xN alloy grown by MOVPE. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  aluminium content;  Vapor phase epitaxy;  Development;  Nitrides;  Region;  Alloys
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Lu DC; Duan S .Quasi-thermodynamic analysis of MOVPE of AlGaN ,JOURNAL OF CRYSTAL GROWTH,2000,208(1-4):73-78
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