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题名: Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers
作者: Ding K;  Li GH;  Han HX;  Wang ZP
发表日期: 1999
摘要: The samples of silicon nanocrystals (nc-Si) were prepared by Si ion implanted into SiO2 layers. Photoluminescence spectra were measured at room temperature and their dependence on thermal annealing was investigated. The experimental results show that PL peaks originate from the defects in SiO2 layers caused by ion implantation when the thermal annealing temperature is lower than 800 C. The PL peak from nc-Si was observed when the thermal annealing temperature was higher than 900 C, and PL intensity reached its maximum at the thermal annealing temperature of 1100 C. As the annealing temperature increases the red shift of PL peak from nc-Si shows the quantum size effect. The characterized Raman scattering peak of nc-Si was observed at the right angle scattering configuration for the first time. It provides further support for the PL measurements.
KOS主题词: Ion implantation;  Photoluminescence;  Raman effect;  Photoluminescence;  Nanocrystals;  Luminescence
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ding K; Li GH; Han HX; Wang ZP .Optical properties of nanometer silicon prepared by silicon ion implanted into SiO2 layers ,JOURNAL OF INFRARED AND MILLIMETER WAVES,1999,18(6):417-422
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