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题名: Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
作者: Xu DP;  Yang H;  Li JB;  Li SF;  Wang YT;  Zhao DG;  Wu RH
发表日期: 2000
摘要: We have investigated the growth of GaN buffers by metalorganic chemical vapor deposition (MOCVD) on GaAs (100) substrates. Atomic force microscope (AFM) and reflection high-energy electron diffraction (RHEED) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. A two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. The size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of GaN layers. Based on the experimental results, a model was given to interpret the formation of hexagonal-phase GaN in the cubic-phase GaN layers. Using an optimum buffer layer, the strong near-band emission of cubic GaN with full-width at half maximum (FWHM) value as small as 5.6 nm was observed at room temperature. The background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3).
KOS主题词: Atomic force microscopy;  Reflection high energy electron diffraction;  Photography--Films;  Finite volume method;  Gallium arsenide;  Dependency;  Nitrides;  Layers
刊名: JOURNAL OF ELECTRONIC MATERIALS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Xu DP; Yang H; Li JB; Li SF; Wang YT; Zhao DG; Wu RH .Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition ,JOURNAL OF ELECTRONIC MATERIALS,2000,29(2):177-182
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