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题名: Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
作者: Wang H;  Niu ZC;  Zhu HJ;  Wang ZM;  Jiang DS;  Feng SL
发表日期: 2000
摘要: After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dot
刊名: PHYSICA B-CONDENSED MATTER
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang H; Niu ZC; Zhu HJ; Wang ZM; Jiang DS; Feng SL .Methods to tune the electronic states of self-organized InAs/GaAs quantum dots ,PHYSICA B-CONDENSED MATTER,2000,279(1-3):217-219
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