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题名: Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
作者: Chen Y;  Li GH;  Zhang W;  Zhu ZM;  Han HX;  Wang ZP;  Zhou W;  Wang ZG
发表日期: 2000
摘要: Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum wire;  electromagnetic wave polarisation;  Photoluminescence;  Temperature;  Imprisonment;  Photoluminescence;  Array;  Gallium arsenide
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen Y; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG .Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy ,JOURNAL OF CRYSTAL GROWTH,2000,209(4):994-998
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