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题名: Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution
作者: Wang HL;  Ning D;  Feng SL
发表日期: 2000
摘要: In this work we report the optical and microscopic properties of self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy (STM) image for uncapped sample. The power-dependent photoluminescence (PL) study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. It is shown that the coupling between quantum dots plays a key role in unusual temperature dependence of QD photoluminescence. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: atomic layer deposition;  Electron microscopy;  atomic layer deposition;  Electronic structure;  Development;  Photoluminescence;  transition
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang HL; Ning D; Feng SL .Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution ,JOURNAL OF CRYSTAL GROWTH,2000,209(4):630-636
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