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题名: The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator
作者: Li JM
发表日期: 2000
摘要: A surface-region-purification-induced p-n junction, a puzzle discovered at Brookhaven National Laboratory, in a silicon-on-defect-layer (SODL) material has been explored by carrying out various annealing conditions and subsequent measurements on electrical properties. The origin of the pn junction has been experimentally investigated. Furthermore, the p-n junction has been transformed into a p-i-n electrical structure by adding a high temperature annealing process to the previously used SODL procedure, making the SODL material approach silicon on insulator (SOI). The control of the initial oxygen amount in the silicon material is suggested to be critical for the experimental results.
KOS主题词: Ion implantation;  Hydrogen;  Oxygen
刊名: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li JM .The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator ,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2000,15(2):L6-L9
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