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题名: Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
作者: Wang HL;  Yang FH;  Feng SL;  Zhu HJ;  Ning D;  Wang H;  Wang XD
发表日期: 2000
摘要: The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally. Such a barrier has been predicted by previous theories. From the deep-level transient spectroscopy (DLTS) measurements, we have obtained the electron and hole energy levels of quantum dots E-e(QD-->GaAs) = 0.13 eV and E-h(QD-->GaAs) = 0.09 eV relative to the bulk unstrained GaAs band edges E-c and E-v. DLTS measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron E-eB = 0.30 eV and hole E-hB = 0.26 eV. The barriers can be explained by the apexes appearing in the interface between InAs and GaAs caused by strain. Combining the photoluminescence results, the band structures of InAs and GaAs have been determined.
KOS主题词: Electronic structure;  ab initio calculations;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis
刊名: PHYSICAL REVIEW B
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang HL; Yang FH; Feng SL; Zhu HJ; Ning D; Wang H; Wang XD .Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots ,PHYSICAL REVIEW B,2000,61(8):5530-5534
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