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题名: Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields
作者: Wang YJ;  Leem YA;  McCombe BD;  Wu XG;  Peeters FM;  Jones ED;  Reno JR;  Lee XY;  Jiang HW
发表日期: 2000
摘要: Electron cyclotron resonance (CR) has been studied in magnetic fields up to 32 T in two heavily modulation-delta-doped GaAs/Al0.3Ga0.7As single quantum well samples. Little effect on electron CR is observed in either sample in the region of resonance with the GaAs LO phonons. However, above the LO-phonon frequency energy E-LO at B > 27 T, electron CR exhibits a strong avoided-level-crossing splitting for both samples at energies close to E-LO + (E-2 - E-1), where E-2, and E-1 are the energies of the bottoms of the second and the first subbands, respectively. The energy separation between the two branches is large, reaching a minimum of about 40 cm(-1) around 30.5 T for both samples. This splitting is due to a three-level resonance between the second LI, of the first electron subband and the lowest LL of the second subband plus an LO phonon. The large splitting in the presence: of high electron densities is due to the absence of occupation (Pauli-principle) effects in the final states and weak screening for this three-level process. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
KOS主题词: Cyclotron resonance;  Electron-phonon interaction;  Gallium arsenide;  Heterostructures
刊名: PHYSICA E
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Wang YJ; Leem YA; McCombe BD; Wu XG; Peeters FM; Jones ED; Reno JR; Lee XY; Jiang HW .Strong resonant intersubband magnetopolaron effect in heavily modulation-doped GaAs/AlGaAs single quantum wells at high magnetic fields ,PHYSICA E,2000,6(1-4):195-200
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