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题名: Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates
作者: Sun XL;  Wang YT;  Yang H;  Zheng LX;  Xu DP;  Li JB;  Wang ZG
发表日期: 2000
摘要: Cubic InxGa1-xN films were successfully grown on GaAs(001) substrates by metalorganic chemical-vapor deposition. The values of x content ranging from 0.10 to 0.24 obtained at different growth conditions were measured by double-crystal x-ray diffraction (XRD). The perpendicular and parallel elastic strain of the In0.2Ga0.8N layer, epsilon(perpendicular to)=0.4% and epsilon(parallel to)=-0.4% for GaN and epsilon(perpendicular to)=0.37% and epsilon(parallel to)=-0.37% for InGaN, respectively, were derived using the XRD measurements. The inhomogeneous strain and the average grain size of the In0.2Ga0.8N/GaN films were also studied by XRD. Photoluminescence spectra were used to measure the optical characterization of the InxGa1-xN thin films with different In composition, and the near-band-edge emission dependence of cubic InxGa1-xN on the x value is nearly linear with In content x less than or equal to 0.24. (C) 2000 American Institute of Physics. [S0021-8979(00)03908-6].
KOS主题词: phase separation
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Sun XL; Wang YT; Yang H; Zheng LX; Xu DP; Li JB; Wang ZG .Strain and photoluminescence characterization of cubic (In,Ga)N films grown on GaAs(001) substrates ,JOURNAL OF APPLIED PHYSICS,2000,87(8):3711-3714
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