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题名: Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy
作者: Jiang WH;  Xu HZ;  Xu B;  Ye XL;  Wu J;  Ding D;  Liang JB;  Wang ZG
发表日期: 2000
摘要: Postgrowth rapid thermal annealing was performed on InGaAs/GaAs quantum dots grown by molecular beam epitaxy. The blue shift of the emission peak and the narrowing of the luminescence line width are observed at lower annealing temperature. However, when the annealing temperature is increased to 850 degrees C, the emission line width becomes larger. The TEM image of this sample shows that the surface becomes rough, and some large clusters are formed, which is due to the interdiffusion of In, Ga atoms at the InGaAs/GaAs interface and to the strain relaxation. The material is found to degrade dramatically when the annealing temperature is further increased to 900 degrees C, while emission from quantum dots can still be detected, along with the appearance of the emission from excited state. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Rapid thermal processing;  Quantum dots;  atomic layer deposition;  Luminescence;  FABRICATION;  interface;  Lasers;  Layer
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Jiang WH; Xu HZ; Xu B; Ye XL; Wu J; Ding D; Liang JB; Wang ZG .Annealing effect on the surface morphology and photoluminescence of InGaAs/GaAs quantum dots grown by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):356-359
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