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题名: Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
作者: Zhuang QD;  Li JM;  Zeng YP;  Yoon SF;  Zheng HQ;  Kong MY;  Lin LY
发表日期: 2000
摘要: We have studied the effect of rapid thermal annealing (RTA) on highly strained InGaAs/GaAs quantum wells by using photoluminescence (PL) and double-crystal X-ray diffraction (DCXRD) measurements. It is found that a distinct additional PL emission peak can be observed for the annealed samples. This PL emission possesses features similar to the PL emission from InGaAs/GaAs quantum dots (QDs) with the same indium content. It is proposed that this emission stems from QDs, which were formed during the annealing process. This formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the InGaAs layer intersurface. The DCXRD measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Rapid thermal processing;  Heat treatment;  Quantum wells;  Diffusion;  Kirkendall effect;  Quantum dots;  atomic layer deposition
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhuang QD; Li JM; Zeng YP; Yoon SF; Zheng HQ; Kong MY; Lin LY .Effect of rapid thermal annealing on InGaAs/GaAs quantum wells ,JOURNAL OF CRYSTAL GROWTH,2000,212(1-2):352-355
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