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题名: Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate
作者: Chen Y;  Li GH;  Zhu ZM;  Han HX;  Wang ZP;  Zhou W;  Wang ZG
发表日期: 2000
摘要: We investigated the photoluminescence (PL) of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots (QDs) grown on (311)A GaAs substrate. The PL peak at 10 K shifts to lower energy by about 30 meV when the excitation power decreases by two orders of magnitude. It has a red-shift under pressure, that is the character of X-like transition. Moreover, its peak energy is smaller than the indirect gap of bulk Al0.5Ga0.5As and In0.55Al0.45As. We then attribute that peak to the type-II transition between electrons in X valley of Al0.5Ga0.5As and heavy holes in In0.55Al0.45As QDs. A new peak appears at the higher energy when temperature is increased above 70 K. It shifts to higher energy with increasing pressure, corresponding to the transition from conduction Gamma band to valence band in QDs. The measurements demonstrate that our In0.55Al0.45As/Al0.5Ga0.5As quantum dots are type-II QDs with X-like conduction-band minimum. To interpret the second X-related peak emerged under pressure, we discuss the X-valley split in QDs briefly. (C) 2000 American Institute of Physics. [S0003-6951(00)04622-2].
KOS主题词: Optical properties;  metallic superlattices;  Pressure;  line width
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen Y; Li GH; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG .Photoluminescence studies of type-II self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on (311)A GaAs substrate ,APPLIED PHYSICS LETTERS,2000,76(22):3188-3190
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