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题名: Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS
作者: Kang XJ;  Lin SM;  Liao QW;  Cheng P;  Gao JH;  Liu SA;  Wang HJ;  Zhang CH;  Wang QM;  Du GT;  Liu Y;  Li XM
发表日期: 2000
摘要: The hybrid integrated photonic switch and not logic gate based on the integration of a GaAs VCSEL (Vertical Cavity Surface Emitting Lasers) and a MISS (Metal-Insulator-Semiconductor Switches) device are reported. The GaAs VCSEL is fabricated by selective etching and selective oxidation. The Ultra-Thin semi-Insulating layer (UTI) of the GaAs MISS is formed by using oxidation of A1As that is grown by MBE. The accurate control of UTI and the processing compatibility between VCSEL and MISS are solved by this procedure. Ifa VCSEL is connected in series with a MISS, the integrated device can be used as a photonic switch, or a light amplifier. A low switching power (10 mu W) and a good on-off ratio (17 dB contrast) have been achieved. If they are connected in parallel, they perform a photonic NOT gate operation.
KOS主题词: Semiconductor lasers;  Photonics;  Epitaxy;  Oxidation
刊名: CHINESE JOURNAL OF ELECTRONICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Kang XJ; Lin SM; Liao QW; Cheng P; Gao JH; Liu SA; Wang HJ; Zhang CH; Wang QM; Du GT; Liu Y; Li XM .Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS ,CHINESE JOURNAL OF ELECTRONICS,2000,9(1):21-24
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