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题名: Tentative analysis of Swirl defects in silicon crystals
作者: Fan TW;  Qian JJ;  Wu J;  Lin LY;  Yuan J
发表日期: 2000
摘要: Swirl defects in dislocation-free Czochralski (CZ) silicon crystals have been investigated by preferential etching, transmission electron microscopy (TER I) and electron energy loss spectroscopy (EELS) mode of a scanning transmission electron microscope (STEM). Two kinds of Swirl defects have been found with a good correspondence between striated pattern consisting of hillocks and the buried micro-defects. The Swirl defects were identified as perfect dislocation loop cluster and tetrahedral precipitate, respectively. In addition, a kind of tiny micro-defects is found to be distributed preferentially in the vicinity of the Swirl pattern although there is no detectable correspondence between hillocks and the micro-defects. The energy-filtered images have been obtained by the plasma peaks at different parts of a coherent precipitate with the Si matrix. The experimental results show some indications of the existence of oxygen and carbon in the core of the precipitate and suggest that oxygen and carbon may play important roles in the formation of Swirl defect. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Silicon;  Electron energy loss spectroscopy
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Fan TW; Qian JJ; Wu J; Lin LY; Yuan J .Tentative analysis of Swirl defects in silicon crystals ,JOURNAL OF CRYSTAL GROWTH,2000,213(3-4):276-282
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