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题名: Influence of precipitates on GaN epilayer quality
作者: Kang JY;  Huang QS;  Wang ZG
发表日期: 2000
摘要: GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.
KOS主题词: Transmission electron microscopy;  Cathodoluminescence;  Electroluminescence;  Vapor phase epitaxy;  Photography--Films;  Finite volume method;  mechanism;  Development
刊名: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Kang JY; Huang QS; Wang ZG .Influence of precipitates on GaN epilayer quality ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2000,75(2-3):214-217
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