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题名: Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001)
作者: Zhu JJ;  Liu SY;  Liang JW
发表日期: 2000
摘要: Raman scattering measurement has been used to study the residual strains in the thin 3C-SiC/Si(001) epilayers with a variation of film thickness from 0.1 to 1.2 mu m. which were prepared by chemical vapor deposition (CVD)growth. Two methods have been exploited to figure our the residual strains and the exact LO bands. The final analyzing results show that residual strains exist in the 3C-SiC epilayers. The average stress is 1.3010 GPa, and the relative change of the lattice constant is 1.36 parts per thousand. Our measurements also show that 3C-SiC phonons are detectable even for the samples with film thickness in the range of 0.1 to 0.2 mu m. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Potential scattering;  Metric system;  Silicon
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhu JJ; Liu SY; Liang JW .Raman study on residual strains in thin 3C-SiC epitaxial layers grown on Si(001) ,THIN SOLID FILMS,2000,368(2):307-311
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