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题名: Epitaxial growth of GaNAs/GaAs heterostructure materials
作者: Lin YW;  Pan Z;  Li LH;  Zhou ZQ;  Wang H;  Zhang W
发表日期: 2000
摘要: A series of systematic experiments on the growth of high quality GaNAs strained layers on GaAs (001) substrate have been carried out by using DC active Nz plasma, assisted molecular beam epitaxy. The samples of GaNAs between 3 and 200 nm thick were evaluated by double crystal X-ray diffraction (XRD) and photoluminescence (PL) measurements. PL and XRD measurements for these samples are in good agreement. Some material growth and structure parameters affecting the properties of GaNAs/GaAs heterostructure were studied; they were: (1) growth temperature of GaNAs epilayer; (2) electrical current of active N-2 plasma; (3) Nz flow rate; (4) GaNAs growth rate; (5) the thickness of GaNAs strained layer. XRD and PL measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 meV Fourier transform infrared spectroscopy (FWHM) can be achieved in molecular beam epitaxy (MBE) system. (C) 2000 Published by Elsevier Science S.A. All rights reserved.
KOS主题词: atomic layer deposition;  Nitrogen content;  Nitrogen
刊名: THIN SOLID FILMS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lin YW; Pan Z; Li LH; Zhou ZQ; Wang H; Zhang W .Epitaxial growth of GaNAs/GaAs heterostructure materials ,THIN SOLID FILMS,2000,368(2):249-252
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