高级检索   注册
SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy
作者: Wang HL;  Zhu HJ;  Ning D;  Wang H;  Wang XD;  Guo ZS;  Feng SL
发表日期: 2000
摘要: The electrical activity of defects in GaAs grown on GaAs substrates doped with Si and Be by both conventional molecular beam epitaxy (MBE) and atomic hydrogen-assisted MBE (H-MBE) were characterized by deep level transient spectroscopy. The trap densities are significantly reduced in the homoepitaxial GaAs grown by H-MBE compared to that grown by MBE. The reduction of trap densities is attributed to in situ passivation of these defects by atomic H during the growth. The improvement characteristics of GaAs materials will be significance for fabrication of semiconductor devices.
KOS主题词: Deep level transient spectroscopy;  Dislocations;  Irradiation;  Heat treatment;  Radiation
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

条目包含的文件

文件 大小格式
1340.pdf199KbAdobe PDF 联系获取全文


许可声明:条目相关作品遵循知识共享协议(Creative Commons)。


推荐引用方式:
Wang HL; Zhu HJ; Ning D; Wang H; Wang XD; Guo ZS; Feng SL .The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2000,19(3):191-193
个性服务
 推荐该条目
 保存到收藏夹
 查看访问统计
 Endnote导出
Google Scholar
 Google Scholar中相似的文章
 [Wang HL]的文章
 [Zhu HJ]的文章
 [Ning D]的文章
CSDL跨库检索
 CSDL跨库检索中相似的文章
 [Wang HL]的文章
 [Zhu HJ]的文章
 [Ning D]的文章
Scirus search
 Scirus中相似的文章
Social Bookmarking
  Add to CiteULike  Add to Connotea  Add to Del.icio.us  Add to Digg  Add to Reddit 
所有评论 (0)
暂无评论

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。

 

 

Valid XHTML 1.0! 版权所有 © 2007-2012  中国科学院半导体研究所  -反馈
系统开发与技术支持:中国科学院国家科学图书馆兰州分馆(信息系统部)
本系统基于 MIT 和 Hewlett-Packard 的 DSpace 软件开发