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题名: Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer
作者: Wang XD;  Wang H;  Wang HL;  Niu ZC;  Feng SL
发表日期: 2000
摘要: InAs self-organized quantum dots (QDs) grown on annealed low temperature GaAs (LT-GaAs) epi-layer were investigated by transmission electron microscopy (TEM) and photoluminescence (PL) measurement. TEM showed that QDs formed on annealed LT-GaAs epi-layer have a smaller size and a higher density than QDs formed on normal GaAs buffer layer. In addition, the PL spectra analysis showed that the LT-GaAs epi-layer resulted in a blue shift in peak energy, and a narrower linewidth in the PL peak. The differences were attributed to the point defects and As precipitates in annealed LT-GaAs epi-layer for the point defects and As precipitates change the strain field of the surface. The results provide a method to improve the uniformity and change the energy band structure of the QDs by controlling the defects in the LT-GaAs epi-layer.
KOS主题词: atomic layer deposition;  Dependency
刊名: JOURNAL OF INFRARED AND MILLIMETER WAVES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang XD; Wang H; Wang HL; Niu ZC; Feng SL .Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer ,JOURNAL OF INFRARED AND MILLIMETER WAVES,2000,19(3):177-180
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