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题名: Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy
作者: Pan Z;  Li LH;  Zhang W;  Lin YW;  Wu RH
发表日期: 2000
摘要: We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Quantum wells;  Gallium arsenide
刊名: APPLIED PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Pan Z; Li LH; Zhang W; Lin YW; Wu RH .Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy ,APPLIED PHYSICS LETTERS,2000,77(2):214-216
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