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题名: Studies of high DC current induced degradation in III-V nitride based heterojunctions
作者: Ho WY;  Surya C;  Tong KY;  Lu LW;  Ge WK
发表日期: 2000
摘要: We report experiments on high de current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electro-luminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 x 10(13) cm(-3) to 4.2 x 10(13) cm(-3) at E-1 = E-C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.
KOS主题词: Deep level transient spectroscopy;  1/f noise;  Heterojunctions;  Electron paramagnetic resonance spectroscopy;  1/f noise;  Gallium nitride;  1/f noise;  Heraldry;  Transistors;  Quality
刊名: IEEE TRANSACTIONS ON ELECTRON DEVICES
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Ho WY; Surya C; Tong KY; Lu LW; Ge WK .Studies of high DC current induced degradation in III-V nitride based heterojunctions ,IEEE TRANSACTIONS ON ELECTRON DEVICES,2000,47(7):1421-1425
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