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题名: Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
作者: Xu HZ;  Wang ZG;  Harrison I;  Bell A;  Ansell BJ;  Winser AJ;  Cheng TS;  Foxon CT;  Kawabe M
发表日期: 2000
摘要: Deep levels in undoped GaN materials grown by modified molecular beam epitaxy (MBE) are investigated by photoluminescence (PL) and optical quenching of photoconductivity measurements. A broad band which extends from 2.1 to 3.0 eV with a maximum at about 2.7 eV is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 eV above the valence band, respectively. These levels are attributed to four holes trap levels existence in the material. The defects cannot be firmly identified at present. (C) 2000 Elsevier Science B.V, All rights reserved.
KOS主题词: Photoluminescence;  atomic layer deposition;  Magnetic resonance imaging;  Magnetic properties;  Thin films
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M .Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy ,JOURNAL OF CRYSTAL GROWTH,2000,217(3):228-232
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