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题名: Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells
作者: Zhang MH;  Han YJ;  Zhang YH;  Huang Q;  Bao CL;  Wang WX;  Zhou JM;  Lu LW
发表日期: 2000
摘要: Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: defect;  Photoluminescence;  electroabsorption;  Electrooptical devices;  atomic layer deposition;  Gallium arsenide;  Recombination;  Dynamics
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang MH; Han YJ; Zhang YH; Huang Q; Bao CL; Wang WX; Zhou JM; Lu LW .Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells ,JOURNAL OF CRYSTAL GROWTH,2000,217(4):355-359
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