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题名: Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate
作者: Chen Y;  Li GH;  Han HX;  Wang ZP;  Xu DP;  Yang H
发表日期: 2000
摘要: Photoluminescence measurements have been performed on cubic GaN films with carrier concentration as low as 3 x 10(13) cm(-3). From the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 eV were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively Additionally, we observed two additional emission lines at 2.926 and 2.821 eV, and suggested that they belong to donor-acceptor pair transitions. Furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 eV) are from a common shallow donor to three different accepters. The excitonic emission at 3.216 eV has a full-width-at-half-maximum value of 41 meV at room temperature, which indicates a good optical quality of our sample.
KOS主题词: atomic layer deposition;  Photoluminescence
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Chen Y; Li GH; Han HX; Wang ZP; Xu DP; Yang H .Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate ,CHINESE PHYSICS LETTERS,2000,17(8):612-614
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