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题名: Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition
作者: Xu DP;  Wang YT;  Yang H;  Li SF;  Zhao DG;  Fu Y;  Zhang SM;  Wu RH;  Jia QJ;  Zheng WL;  Jiang XM
发表日期: 2000
摘要: Strains in cubic GaN films grown on GaAs (001) were measured by a triple-axis x-ray diffraction method. Residual strains in the as-grown epitaxial films were in compression, contrary to the predicted tensile strains caused by large lattice mismatch between epilayers and GaAs substrates (20%). It was also found that the relief of strains in the GaN films has a complicated dependence on the growth conditions. We interpreted this as the interaction between the lattice mismatch and thermal mismatch stresses. The fully relaxed lattice constants of cubic GaN are determined to be 4.5038 +/- 0.0009 Angstrom, which is in excellent agreement with the theoretical prediction of 4.503 Angstrom. (C) 2000 American Institute of Physics. [S0021-8979(00)07918-4].
KOS主题词: atomic layer deposition;  Residual stresses;  Stress (mechanics);  Photoelasticity;  Thermal stresses
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Xu DP; Wang YT; Yang H; Li SF; Zhao DG; Fu Y; Zhang SM; Wu RH; Jia QJ; Zheng WL; Jiang XM .Anomalous strains in the cubic-phase GaN films grown on GaAs (001) by metalorganic chemical vapor deposition ,JOURNAL OF APPLIED PHYSICS,2000,88(6):3762-3764
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