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题名: Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)
作者: Liu HY;  Wang XD;  Wu J;  Xu B;  Wei YQ;  Jiang WH;  Ding D;  Ye XL;  Lin F;  Zhang JF;  Liang JB;  Wang ZG
发表日期: 2000
摘要: Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height. (C) 2000 American Institute of Physics. [S0021-8979(00)04018-4].
KOS主题词: atomic layer deposition;  room temperature;  emission;  Lasers;  Water-power;  Force and energy
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liu HY; Wang XD; Wu J; Xu B; Wei YQ; Jiang WH; Ding D; Ye XL; Lin F; Zhang JF; Liang JB; Wang ZG .Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3) ,JOURNAL OF APPLIED PHYSICS,2000,88(6):3392-3395
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