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题名: Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE
作者: Zhu QS;  Matsushima H;  Hiramatsu K;  Sawaki N
发表日期: 2000
摘要: Three-dimensional GaN pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (MOVPE) technique. The dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. The GaN structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. Cathodoluminescence (CL) measurement was carried our. on the hexagonal pyramid at low temperature. Two distinct spectra were observed to occur at about 359 and 329 nm. The higher energy is thought to be related to GaN dot, and the lower one is due to GaN dot band edge emission. The intensities of the two spectra were investigated as a function of temperature in the range of 135-150 K. (C) 2000 Published by Elsevier Science B.V.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Development;  flat surfaces;  Wire rope;  atomic layer deposition
刊名: APPLIED SURFACE SCIENCE
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Zhu QS; Matsushima H; Hiramatsu K; Sawaki N .Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE ,APPLIED SURFACE SCIENCE,2000,167(3-4):149-151
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