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题名: Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots
作者: Wang XD;  Niu ZC;  Feng SL
发表日期: 2000
摘要: Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.
KOS主题词: Doppler effect;  Photoluminescence;  Water-power;  Force and energy
刊名: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang XD; Niu ZC; Feng SL .Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots ,JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2000,39(9A):5076-5079
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