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题名: 1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films
作者: Liang JJ;  Chen WD;  Wang YQ;  Chang Y;  Wang ZG
发表日期: 2000
摘要: Hydrogenated amorphous silicon films co-doped with oxygen (O), boron (B) and phosphorus (P) were fabricated using PECVD technique. The erbium (Er) implanted samples were annealed in a N-2 ambient by rapid thermal annealing. Strong photoluminescence (PL) spectra of these samples were observed at room temperature. The incorporation of O, B and P could not only enhance the PL intensity but also the thermal annealing temperature of the strongest PL intensity. It seems that the incorporation of B or P can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger PL intensity. Temperature dependence of PL indicated the thermal quenching of Er-doped hydrogenated amorphous silicon is very weak.
KOS主题词: Erbium;  Photoluminescence;  Silicon;  Electroluminescence;  Erbium
刊名: CHINESE PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang JJ; Chen WD; Wang YQ; Chang Y; Wang ZG .1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films ,CHINESE PHYSICS,2000,9(10):783-786
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