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题名: Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
作者: Li YF;  Liu FQ;  Xu B;  Ye XL;  Ding D;  Sun ZZ;  Jiang WH;  Liu HY;  Zhang YC;  Wang ZG
发表日期: 2000
摘要: Self-assembled InAs quantum dots (QDs) in InAlAs grown on (001) and (311)B InP substrates by molecular beam epitaxy (MBE) have been comparatively investigated. A correlated study of atomic force microscopy (AFM) and photoluminescence (PL) disclosed that InAs QDs grown on high-index InP substrates can lead to high density and uniformity. By introducing a lattice-matched InAlGaAs overlayer on InAlAs buffer, still more dense and uniform InAs QDs were obtained in comparison with InAs QDs formed with only InAlAs matrix. Moreover, two-dimensional well-ordered InAs dots with regular shape grown on (311)B InP substrates are reported for the first time. We explained this exceptional phenomenon from strain energy combined with kinetics point of view. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dots;  atomic layer deposition;  atomic layer deposition;  Gallium arsenide;  Organization;  Lasers;  Layer
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Li YF; Liu FQ; Xu B; Ye XL; Ding D; Sun ZZ; Jiang WH; Liu HY; Zhang YC; Wang ZG .Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate ,JOURNAL OF CRYSTAL GROWTH,2000,219(1-2):17-21
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