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SEMI OpenIR  > 中国科学院半导体研究所(2009年前)  > 期刊论文

题名: A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4
作者: Yu Z;  Li DZ;  Cheng BW;  Huang CJ;  Lei ZL;  Yu JZ;  Wang QM;  Liang JW
发表日期: 2000
摘要: The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Epitaxy;  Surface reaction kinetics;  Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  Atomic hydrogen;  Adsorption;  mechanism;  desorption;  phase;  Photography--Films;  Finite volume method
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Yu Z; Li DZ; Cheng BW; Huang CJ; Lei ZL; Yu JZ; Wang QM; Liang JW .A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4 ,JOURNAL OF CRYSTAL GROWTH,2000,218(2-4):245-249
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