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题名: Formation of InAs quantum dots on low-temperature GaAs epi-layer
作者: Wang XD;  Niu ZC;  Wang H;  Feng SL
发表日期: 2000
摘要: InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs were formed with a smaller size and larger density than that on normal GaAs buffer layers. It is discussed that local tensile surface strain regions that are preferred sites for InAs islands nucleation are increased in the case of the LT-GaAs buffer layers due to exhibiting As precipitates. The PL spectra show a blue-shifted peak energy with narrower linewidth revealing the improvement of optical properties of the QDs grown on LT-GaAs epi-layers. It suggests us a new way to improve the uniformity and change the energy band structure of the InAs self-organized QDs by carefully controlling the surface stress states of the LT-GaAs buffers on which the QDs are formed. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dot;  Rapid thermal processing;  Heat treatment;  Transmission electron microscopy;  atomic layer deposition;  Islands;  Development;  Surfaces
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wang XD; Niu ZC; Wang H; Feng SL .Formation of InAs quantum dots on low-temperature GaAs epi-layer ,JOURNAL OF CRYSTAL GROWTH,2000,218(2-4):209-213
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