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题名: Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors
作者: Wu J;  Lin F
发表日期: 2000
摘要: Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application. Most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their Burges vectors. The misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of Burges vectors in [001] pointing up or down. If b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. In addition, the periodical modulation in height along [-110] on the In(0.8)G(0.2)As surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.
KOS主题词: Misfit dislocations;  Surface contamination;  Development;  Relaxation;  Substrate;  bootstrap circuits;  Electronic circuits
刊名: DEFECTS AND DIFFUSION IN SEMICONDUCTORS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Wu J; Lin F .Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors ,DEFECTS AND DIFFUSION IN SEMICONDUCTORS,2000,183-1(0 ):147-152
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