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题名: Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots
作者: Zhang YC;  Huang CJ;  Liu FQ;  Xu B;  Ding D;  Jiang WH;  Li YF;  Ye XL;  Wu J;  Chen YH;  Wang ZG
发表日期: 2000
摘要: In this work we report the photoluminescence (PL) and interband absorption study of Si-modulation-doped multilayer InAs/GaAs quantum dots grown by molecular beam epitaxy (MBE) on (100) oriented GaAs substrates. Low-temperature PL shows a distinctive double-peak feature. Power-dependent PL and transmission electron microscopy (TEM) confirm that they stem from the ground states emission of islands of bimodal size distribution. Temperature-dependent PL study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (QDs). The temperature-dependent PL and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of QDs of different sizes in the ensemble. (C) 2000 Elsevier Science B.V. All rights reserved.
KOS主题词: Quantum dots;  atomic layer deposition;  Photoluminescence;  absorption;  Optical properties;  Photoluminescence;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Lasers
刊名: JOURNAL OF CRYSTAL GROWTH
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Zhang YC; Huang CJ; Liu FQ; Xu B; Ding D; Jiang WH; Li YF; Ye XL; Wu J; Chen YH; Wang ZG .Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots ,JOURNAL OF CRYSTAL GROWTH,2000,219(3):199-204
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