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题名: Light and annealing induced changes in Si-H bonds in undoped a-Si : H
作者: Sheng SR;  Kong GL;  Liao XB
发表日期: 2000
摘要: Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a differential infrared spectroscopy method. The light-induced changes in Si-H bonds are not monotonic, quite different from the usual Staebler-Wronski effect in electronic properties, and involve more complicated physics. The magnitude of the light-induced changes in Si-H bonds is proportional to the hydrogen content in the film. There may exist more than one microscopic process which determine the light-induced changes in Si-H bonds. Almost the whole a-Si:H network is affected when a-Si:H is subjected to Light-soaking or to annealing. The light-induced changes in Si-H bonds may be an independent light-induced phenomenon or an auxiliary process of the metastable SWE defect creation. (C) 2000 Elsevier Science Ltd. All rights reserved.
KOS主题词: amorphous silicon;  Semiconductors;  Infrared radiation;  Example;  Modeling;  metastable state;  SOAKING
刊名: SOLID STATE COMMUNICATIONS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sheng SR; Kong GL; Liao XB .Light and annealing induced changes in Si-H bonds in undoped a-Si : H ,SOLID STATE COMMUNICATIONS,2000,116(9):519-524
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