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题名: Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)
作者: Liang JJ;  Chen WD;  Wang YQ;  He J;  Zheng WM;  Wang ZG
发表日期: 2000
摘要: The hydrogenated amorphous SiOx films (a-SiOx:H) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. The films were implanted with erbium and annealed by rapid thermal annealing. An intense photoluminescence (PL) of Er at 1.54 mum has been observed at 77 K and at room temperature. The PL intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of O/Si in the film is approximately equal to 1.0 at 77 K and to 1.76 at room temperature. The microstructure of the film also has strong influences on the PL intensity. The PL intensity at 250 K is slightly more than a half of that at 15 K. It means that the temperature quenching effect of the PL intensity is very weak.
KOS主题词: Luminescence;  Electroluminescence;  Semiconductors;  Metric system;  Silicon
刊名: CHINESE PHYSICS LETTERS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liang JJ; Chen WD; Wang YQ; He J; Zheng WM; Wang ZG .Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2) ,CHINESE PHYSICS LETTERS,2000,17(11):838-840
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