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题名: Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot
作者: Li SS;  Xia JB
发表日期: 2000
摘要: Quantum-confined Stark effects in InAs/GaAs self-assembled quantum dots are investigated theoretically in the framework of effective-mass envelope function theory. The electron and hole energy levels and optical transition energies are calculated in the presence of perpendicular and parallel electric field. In our calculation, the effect of finite offset, valence band mixing, and strain are all taken into account. The results show that the perpendicular electric field weakly affects the electron ground state and hole energy levels. The energy levels are affected strongly by the parallel electric field. For the electron, the energy difference between the ground state and the first excited state decreases as electric field increases. The optical transition energies have clear redshifts in electric field. The theoretical results agree well with the available experimental data. Our calculated results are useful for the application of quantum dots to photoelectric devices. (C) 2000 American Institute of Physics. [S0021-8979(00)11001-7].
KOS主题词: EMT;  Gallium arsenide;  Photoluminescence;  Islands
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Li SS; Xia JB .Quantum-confined Stark effects of InAs/GaAs self-assembled quantum dot ,JOURNAL OF APPLIED PHYSICS,2000,88(12):7171-7174
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