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题名: Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction
作者: Lian P;  Yin T;  Gao G;  Zou DS;  Chen CH;  Li JJ;  Shen GD;  Ma XY;  Chen LH
发表日期: 2000
摘要: A novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. In this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. This structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. Low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of Si:GaAs/C:GaAs tunnel junctions, GaAs/InGaAs strain quantum well active regions. External differential quantum efficiency as high as 2.2 and light power output of 2.5 W per facet (under 2A drive current) are achieved from an uncoated novel laser device with three active regions.
KOS主题词: Semiconductor lasers;  atomic layer deposition;  Operation
刊名: ACTA PHYSICA SINICA
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Lian P; Yin T; Gao G; Zou DS; Chen CH; Li JJ; Shen GD; Ma XY; Chen LH .Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction ,ACTA PHYSICA SINICA,2000,49(12):2374-2377
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