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题名: Hydrogenated amorphous silicon films with significantly improved stability
作者: Sheng SR;  Liao XB;  Ma ZX;  Yue GZ;  Wang YQ;  Kong GL
发表日期: 2001
摘要: A new regime of plasma-enhanced chemical-vapor deposition (PECVD), referred to as "uninterrupted growth/annealing" method, has been proposed for preparation of high-quality hydrogenated amorphous silicon (a-Si:H) films. By using this regime, the deposition process no longer needs to be interrupted, as done in the chemical annealing or layer by layer deposition, while the growing surface is continuously subjected to an enhanced annealing treatment with atomic hydrogen created in the hydrogen-diluted reactant gas mixture at a relatively high plasma power. The intensity of the hydrogen plasma treatment is controlled at such a level that the deposition conditions of the resultant films approach the threshold for microcrystal formation. In addition, a low level of B-compensation is used to adjust the position of the Fermi level close to the midgap. Under these conditions, we find that the stability and optoelectronic properties of a-Si:H films have been significantly improved. (C) 2001 Elsevier Science B.V. All rights reserved.
KOS主题词: amorphous silicon;  Stability;  Solar cells;  solar generators;  absorption;  Density;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis;  Increase
刊名: SOLAR ENERGY MATERIALS AND SOLAR CELLS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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推荐引用方式:
Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL .Hydrogenated amorphous silicon films with significantly improved stability ,SOLAR ENERGY MATERIALS AND SOLAR CELLS,2001 ,68(1):123-133
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