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题名: Ion bombardment as the initial stage of diamond film growth
作者: Liao MY;  Qin FG;  Zhang JH;  Liu ZK;  Yang SY;  Wang ZG;  Lee ST
发表日期: 2001
摘要: It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.
KOS主题词: Chemical vapor deposition;  atomic layer deposition;  Vapor-plating;  mechanism;  Silicon;  Electron paramagnetic resonance spectroscopy;  alpha-particle spectra;  Optical spectrometers;  Spectrum analysis
刊名: JOURNAL OF APPLIED PHYSICS
专题: 中国科学院半导体研究所(2009年前)_期刊论文

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Liao MY; Qin FG; Zhang JH; Liu ZK; Yang SY; Wang ZG; Lee ST .Ion bombardment as the initial stage of diamond film growth ,JOURNAL OF APPLIED PHYSICS,2001 ,89(3):1983-1985
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